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September 3rd, 2010 - No Comments »
New way to extract light from semiconductors could lead to ultra-high efficiency LEDs
(PhysOrg.com) — By fabricating ridges coated with silicon dioxide (SiO2) on the surface of a semiconductor, scientists from the National Institute of Advanced Industrial Science and Technology (AIST) in Japan have shown how to extract light from a semiconductor with an extremely high [...]


